Tunable linear MOS resistors uUsing quasi-floating-gate techniques

  1. Torralba, A.
  2. Luján-Martínez, C.
  3. Carvajal, R.G.
  4. Galan, J.
  5. Pennisi, M.
  6. Ramírez-Angulo, J.
  7. López-Martín, A.
Revue:
IEEE Transactions on Circuits and Systems II: Express Briefs

ISSN: 1549-7747

Année de publication: 2009

Volumen: 56

Número: 1

Pages: 41-45

Type: Article

DOI: 10.1109/TCSII.2008.2010163 GOOGLE SCHOLAR
La source de données: Scopus